How Do I Get a PhD in Chemistry?

Liu Yan, female, born in November 1978, doctor, researcher, doctoral supervisor.

Liu Ye

(PhD Tutor)

Right!

Liu Yan, female, born in November 1978, doctor, researcher, doctoral supervisor.

He received his PhD in materials physics and chemistry from the Institute of Semiconductors, Chinese Academy of Sciences in 2006, and then worked at the Semiconductor Lighting R & D Center of the Institute of Semiconductors, Chinese Academy of Sciences. The main research work includes material growth of large mismatch systems and structural design of LEDs, growth of new nitride materials and device development, research on high-efficiency green LEDs and related optoelectronic materials

Chinese name

Liu Ye

Country of Citizenship

China

date of birth

November 1978

Occupation

Researcher, PhD supervisor

representative work

Won the Beijing Science and Technology Award in 2012

Liu Yan, female, doctor, researcher, doctoral supervisor.

Born in November 1978, 2006

The main research work includes material growth of large mismatch systems and structural design of LEDs, growth of new nitride materials and device development, research on high-efficiency green LEDs and related optoelectronic materials. "Twelfth Five-Year Plan" as the person in charge of the Institute of Semiconductors undertook the "Semiconductor Lighting Product Testing and Quality Certification Platform Construction" project of the Ministry of Science and Technology. During the "Tenth Five-Year Plan" and "11th Five-Year Plan" period, he participated in many nitride-related Project research, including national 863 "Si-based GaN material research", "Tenth Five-Year Plan" semiconductor lighting national science and technology research plan, national 863 major project semiconductor lighting and other projects. Responsible for the international cooperation and exchange of the lighting center for a long time, with the Sandia National Laboratory, Alamos National Laboratory, Japan

New type

1. "Construction of Semiconductor Lighting Product Testing and Quality Certification Platform" Ministry of Science and Technology Support Project (Project Leader)

2. "Research on the Growth of AlGaN Materials for Ultraviolet LEDs" 863 Major Project of the Ministry of Science and Technology

3. "HVPE Method for Preparation of GaN Homogeneous Substrate" 863 Major Project of Ministry of Science and Technology

4. "Semiconductor Lighting Major Scientific Frontier Research Ministry of Science and Technology" Major International Cooperation Project of Ministry of Science and Technology

5. "High-Efficiency Nitride LED Heterostructure Design and Quantum Efficiency Enhancement" 973 Project of Ministry of Science and Technology

6. "Si-based GaN Materials Research" 863 Project of Ministry of Science and Technology

7. "Scientific cooperation between China and the Netherlands China Exchange Programme" funded by the Royal Netherlands Academy of Arts and Sciences

1. Jinmin Li, Junxi Wang, Zhe Liu, Thermal Management for LED Application

2. Zhe LIU, Xiaoliang WANG, Junxi WANG, Guoxin HU, Lunchun GUO, Jianping LI, Jinmin LI, Yiping ZENG, Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

3. Zhe Liu, Ning Zhang, Peng Dong, Jinmin Li, Junxi WangModification of polarization fields in the multiple quantum wells of InGaN-based green light-emitting diodes via Mg-doping in the barriers

4. Zhe LIU, Xiaoliang WANG, Junxi WANG, Guoxin HU, Lunchun GUO, Jianping LI, Jinmin LI, Yiping ZENG, Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD, POSTER PRESENTATION for ICMOVPE- XIII

5. Zhe LIU, Junxi WANG, Xiaoliang WANG, Guoxin HU, Lunchun GUO, Hongxin LIU, Jianping LI, Jinmin LI, Yiping ZENG, Study on surface morphology of GaN growth by MOCVD on GaN / Si (111) template, ORAL REPORT on The 3rd Asian Conference on Crystal Growth and Crystal Technology

6. Ning Zhang, Zhe Liu, Tongbo Wei, Lian Zhang, Xuecheng Wei et al. Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes

7.ZHANG Ning, LIU Zhe, SI Zhao et al. On efficiency droop and modification of polarization fields of InGaN-based green light-emitting diodes via Mg-doping in the barriers

8.Ning Zhang, Zhe Liu, Tongbo Wei, Lian Zhang et al., 9th International Symposium on Semiconductor Light Emitting Devices ^[1]

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