What is Spintronics?

Spintronics, also known as magnetoelectronics. It uses the spin and magnetic moment of electrons, so that in addition to the charge transport in solid devices, the spin and magnetic moment of electrons are also added. Is an emerging discipline and technology. Materials used in spintronics need to have higher electron polarizability and longer electron spin relaxation time. Many new materials, such as magnetic semiconductors and semi-metals, have been extensively studied in recent years in order to meet the properties required for the application of spin electronic components.

Found in 1980 with solid-state devices

The application prospect of spin random storage in spin electrons is not limited to the traditional computer storage system, but can also be extended to many other fields, and it is even expected to become a universal memory. For example, the engine control module uses magnetic random storage to ensure that data is not lost in the event of a power failure. In view of the advantages of magnetic storage with radiation resistance, MRAM is used in the flight control system of the A350 to prevent data from being damaged by rays.

In addition, in emerging applications such as the Internet of Things and big data, ubiquitous sensor terminals need to collect data. In order to save storage power consumption, it is imperative to use non-volatile memory. Spin random storage based on the principle of spin electronics Devices have become popular candidates for their relatively good performance. ^[2]

Spin injection and detection are the most basic conditions for implementing spin electronic devices. Spin-injection of the magnetic material semiconductor interface is the most basic spin-injection structure as a source of spin polarization and the detection of magnetic material electrodes are ferromagnetic metals. Three types of magnetic semiconductors, magnetic semiconductors and dilute magnetic semiconductors, have high spin injection efficiency. However, the growth of magnetic semiconductors, such as hafnium sulfide, is extremely difficult. Therefore, research focuses on the injection of dilute magnetic semiconductors from dilute magnetic semiconductors and ferromagnetic metals into non-magnetic semiconductors. The ferromagnetic transition temperature of the dilute magnetic semiconductors is much lower than room temperature! Although the theory predicts that the ferromagnetic transition temperature of some materials can be higher than room temperature. But before the development of dilute magnetic semiconductors that can be applied at room temperature, contacting ferromagnetic metal semiconductors was still the most promising method to achieve all electrical control from injection spin manipulation to detection. ^[3]