What Is an Insulated Gate Bipolar Transistor?

Insulate-Gate Bipolar Transistor (IGBT) combines the advantages of power transistors (GTR) and power field effect transistors (Power MOSFETs), has good characteristics, and has a wide range of applications; IGBTs are also three-terminal Devices: gate, collector and emitter.

Insulated Gate Bipolar

Figure 1 (a) shows an N-channel enhancement mode

The N-channel IGBT works by applying a (positive) voltage above the threshold voltage VTH between the gate and the emitter to form an inversion layer (channel) on the p-layer directly below the gate electrode, starting from the emitter electrode The lower n-layer is injected with electrons. This electron is the minority carrier of the p + np transistor, and flows into the hole starting from the p + layer of the collector substrate for conductivity modulation (bipolar operation), so the saturation voltage between the collector and the emitter can be reduced. An n + pn-parasitic transistor is formed on the emitter electrode side. If n + pn- parasitic transistor works, it becomes p + n- pn + thyristor again. The current continues to flow until the output side stops supplying current. Control is no longer possible with output signals. This state is generally called

In 2010, the Institute of Microelectronics of the Chinese Academy of Sciences successfully developed China's first industrializable IGBT chip. The 15-43A / 1200V IGBT series products (using the Planar NPT device structure) designed and developed by the Institute of Microelectronics of the Chinese Academy of Sciences were used in China Resources Microelectronics Technology The platform was successfully streamed, and all parameters met the design requirements, and some of the performance was better than similar foreign products. This is the first self-developed industrialized IGBT (Insulated Gate Bipolar Transistor) product in China, marking a major breakthrough in the industrialization process of IGBT chips produced in China. Proven IGBT process line. The research results are mainly for the field of home appliance applications. It is jointly marketed with Jiangsu Silicon Lake Electronic Technology Co., Ltd. It is currently being tried by well-known domestic appliance enterprise users. The Institute of Microelectronics and China Resources Microelectronics will jointly promote the development of domestic independent IGBT products. Mass production. ^[2]