What is MOSFET transistor?
MOSFET Transistor is a semiconductor device that switches or amplifies signals in electronic devices. MOSFET is an abbreviation for the transistor of the field effect of metal oxide. The name can be written differently as MOSFET, MOS FET or MOS-FET; The term MOSFET transistor is commonly used, despite its redundancy. The purpose of the MOSFET transistor is to affect the flow of electrical charge by the device by means of a small amount of electricity to affect the flow of much larger quantities. MOSFETS are the most commonly used transistors in modern electronics.
The transistor MOSFET is ubiquitous in modern life because it is the type of transistor most commonly used in integrated circuits, which is the basis of almost all modern computers and electronic devices. MOSFET transistor is suitable for this role due to low energy and scattering, low waste heat and low cost of mass production. A modern integrated circuit may contain billions of MOSFETS. MOSFET transistors are transmitted in devices from cellularPhones and digital watches to huge supercomputers used for comprehensive scientific calculations in fields such as climatology, astronomy and particle physics. The source and drain are located in the transistor body, while the gate is above these three terminals located between the source and the drain. The gate is separated from the other terminals by a thin layer of insulation.
MOSFET can be designed to use either negatively charged electrons or positive electron openings as electric charge carriers. The terminals of the sources, gateway and drain are designed to have excess electrons or electron openings, which provides negative or positive polarity. Source and drain are always the same polarity and the gate is always the opposite polarity of Tzdroj and drainage.
When the voltage between the body and the gate and the gate is increased, the electric charge receives, the electric carriers of the same charge bounce off the gate area and createWhat is called the depletion area. If this area becomes large enough, what is called inverse layer on the boundary of insulating and semiconduct layers, which provides a channel where hub carriers can easily flow against the opposite polarity of the gate. This allows a large amount of electricity to flow from the source to the outflow. Like all transistors of efficient field effects, each individual MOSFET transistor uses exclusively positive or negative charge carriers.
MOSFET transistors are mainly made of silicon or silicon german. The properties of the semiconductor terminals can be changed by adding small impurities such as boor, phosphorus or arsenic, a process called doping. The gate is usually made of polykrystaallin silicon, although some MOSFETS have gates made of polysilicone alloyed metals such as titanium, tungsten or nickel. Extremely small transistors are used by gates made of metals such as tungsten, tantalum or titanium nitride. The insulating layer is most commonI made of silicon oxide oxide (so 2 sub>), although other oxide compounds are also used.