What is Annealing?

Annealing, mainly refers to the heat treatment process of exposing the material to high temperature for a long time, and then slowly cooling. The main purpose is to release stress, increase the ductility and toughness of the material, and produce special microstructures.

Annealing

Annealing, mainly refers to the heat treatment process of exposing the material to high temperature for a long time, and then slowly cooling. The main purpose is to release stress, increase the ductility and toughness of the material, and produce special microstructures.
The annealing process includes full annealing, spheroidizing annealing, isothermal annealing, graphite annealing, diffusion annealing, stress relief annealing, incomplete annealing, post-weld annealing, and the like.
Chinese name
Annealing
Foreign name
Annealing
Objective 1
Release stress
Objective 2
Increase material ductility and toughness
Objective 3
Create special microstructure
Chinese name: annealing treatment
English name: Annealing
Improve or eliminate steel during casting,
LiF and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) were used as poly 3-hexylthiophene (P3HT) / [6,6] -phenyl-C61 -Polymethyl butyrate (PCBM) system polymer photovoltaic cell cathode interfacial layer. The effects of high temperature post-annealing on the performance of devices with different interfacial layers were studied. The study found that the introduction of the LiF interface layer formed a strong dipole effect between the active layer and the cathode interface, thereby improving the performance of the battery, and still maintaining a good interface effect after further high temperature thermal annealing treatment, making the device's Energy conversion efficiency has been further improved. However, the introduction of the BCP interface layer, although blocking the electron transfer from the metal electrode Al to PCBM, leads to a reduction in recombination and increases the open circuit voltage of the device, but after further high temperature post-annealing, the integrity of the BCP interface layer is destroyed, so This makes the energy conversion efficiency of the device lower [2] .
High temperature device

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