What Is Ferroelectric Memory?

Ferroelectric memory (FRAM, ferroelectric RAM) is a type of random access memory that will allow fast read and write access to dynamic random access memory (DRAM)-it is the most commonly used type of personal computer storage-and The ability to retain data after power is turned off (like other stable storage devices, such as read-only memory and flash memory) is combined.

Ferroelectric memory (FRAM, ferroelectric RAM) is a type of random access memory that will allow fast read and write access to dynamic random access memory (DRAM)-it is the most commonly used type of personal computer storage-and The ability to retain data after power is turned off (like other stable storage devices, such as read-only memory and flash memory) is combined. Since ferroelectric memory is not as dense as dynamic random access memory (DRAM) and static random access memory (SRAM) (that is, it cannot store as much data as they do in the same space), it is likely that it will not replace these technologies. However, because it can be stored quickly with very low power requirements, it is expected to be widely used in consumer's small devices, such as personal digital assistants (PDAs), mobile phones, power meters, smart cards, and security systems. Ferroelectric memory (FRAM) is faster than flash memory. In some applications, it may also replace electrically erasable read-only memory (EEPROM) and static random access memory (SRAM), and become a key component of future wireless products ^[1]

Ferroelectric storage technology was proposed as early as 1921. Until 1993, Ramtron International of the United States successfully developed the first 4K-bit

The first thing to explain is the technical differences between ferroelectric memories and floating gate memories. Existing flash and

FRAM utilization

FRAM

FRAM holds data not by the charge on the capacitor, but by the

There must be a "precharge" process after the FRAM read operation to recover

Ramtron's FRAM mainly includes two categories: serial FRAM and parallel FRAM. Among them, serial FRAM is divided into I2C two-wire FM24 series and SPI three-wire FM25 series. Serial FRAM and traditional 24 and 25 E2PROM

In most 8051 systems, the

FM1808 and 8051 interface circuit use 8051's ALE signal and

In short, FRAM products provide a new choice of usable memory, which will perform better in applications that originally used E2PROM, and found a new way for some application systems that originally thought that SRAM and E2PROM were needed. Ferroelectric has solved the limitation of the maximum number of accesses, and can become all embedded and general-purpose memories ^[3] .