What is RF Magnetron Spraying?
Radiofrequency Magnetron Spray, also called RF Magnetron Spartering, is a process that is used to create a thin film, especially when using materials that are non -conductive. In this process, a thin film is grown on a substrate, which is located in the vacuum chamber. Powerful magnets are used to ionize the target material and encourage it to settle on a substrate in the form of a thin film.
The first step in the Magnetron RF spray process is to place the substrate material into the vacuum chamber. The air is then removed and the target material, the material that contains a thin film, is released into the chamber in the form of gas. The particles of this material are ionized using powerful magnets. Now in the form of plasma, the negatively charged target material is equal to the substrate to create a thin film. Thin movies can range from several hundred atoms or molecules.
Magnets help speed up the growth of thin film because atoms magnetization helps increaseT percent of the target material that becomes ionized. Ionized atoms more often interact with other particles involved in the thin film process and are therefore more likely to settle on the substrate. This increases the effectiveness of the thin film process, which allows them faster and at lower pressures.
The spraying process of RF Magnetron is particularly useful for the production of thin films from materials that are not conductive. These materials can have more difficulty in creating a thin film because they become positively charged without the use of magnetism. Atoms with positive charge slows down the spray process and can "annoy" other particles of the target material, which further slows down this process.
Magnetron spray can be used with conductive or non -conductive materials, while the related process, called the diode (DC) of the Magnetron spray, only works with conductive material. Dc magnetron spraying with timeThis does at higher pressures, which can be difficult to maintain. Lower pressures used in Magnetron RF are possible due to the high percentage of ionized particles in the vacuum chamber.