What is the chemical deposition of steam?
Chemical Deposition PAR (CVD) is a chemical process that uses a chamber of reactive gas to synthesize high -performance solid materials such as electronic components. Some components of integrated circuits require electronics made of polyposilicone, silicon oxide and silicon nitride. An Example of A Chemical Vapor Deposition Process Is the Synthesis of Polycrystalline Silicon From Silane Pure Silane Gas, Or Silane With 70-80% Nitrogen. The use of temperature between 600 and 650 ° C (1100 - 1200 ° F) and pressure between 25 and 150 Pa - less than a thousandth atmosphere - pure silicon can be stored at 10 to 20 nm per minute, perfect for many components of the circuit board whose thickness is measured in microns. In general, temperatures within the temperature of the chemical pair of the ition are high, while the pressures are very low. The lowest pressures, below 10 --7 Pascals instead. Some products of chemical pairs include silicon, carbon fiber, carbon nanofiber, filaments, carbon nanotubes, silicon germanium, tungsten, silicon carbide, silicon nitride, silicon oxynitrid, titanium nitrid. Materials producing a pile using chemical deposition of par can be very expensive due to the requirements for the performance of the process that are partly responsible for the extremely high costs (hundreds of millions of dollars) of semiconductor factories. The reactions of chemical deposition often leave by -products that must be removed by continuous gas flow. There are several main classification schemes for chemical processes of par. These include pressure classification (atmosphericKa, low -pressure or ultra -high vacuum), steam characteristics (aerosol or direct liquid injection) or plasma processing type (deposition supported by micro -plasma, plasma deposition).