What are Some Examples of Nanoscale Devices?

Nanoelectronic devices refer to electronic devices with nanometer scale and specific functions designed and prepared by using nanoscale processing and manufacturing technologies, such as photolithography, epitaxy, microfabrication, self-assembly growth, and molecular synthesis technologies.

Nanoelectronic devices refer to electronic devices with nanometer scale and specific functions designed and prepared by using nanoscale processing and manufacturing technologies, such as photolithography, epitaxy, microfabrication, self-assembly growth, and molecular synthesis technologies.

Chinese name

Nanoelectronic device

Foreign name

nano-electroniccomponents

1 Nanoelectronic Device 1 Background

Nanotechnology is a high-tech discipline that studies and applies the motion laws and characteristics of electrons, atoms, and molecules in the 0.1-100um scale space. Its goal is to use monoatoms and molecules to make products with specific functions. The domestic and foreign scientific and technological circles have generally considered that nanotechnology has become the most dynamic research object in the research field today and has a very important research object for future economic and social development. Nanotechnology is driving huge changes in human society. It will not only promote a revolution in human understanding, but also trigger a new industrial revolution. ^[1]

Nanotechnology is a new science and technology field that has risen in the late 20th century.It is a brand-new high-tech subject group, which includes nanoelectronics, nano-optoelectronics, nano-photonics, nano-physics, nano-optics, nano-materials, nano-mechanics Science, nanobiology, nanometry, nanotechnology, nanomedicine, nanomicroscopy, nanoinformatics, nanoenvironmental engineering, and nanomanufacturing. It is an emerging technology that integrates basic research and application exploration. ^[1]

Nanoelectronics is the detection, identification and control of the movement of a single quantum or quantum wave within a nanostructure (quantum dot) of 0.1 to 100nm. It studies the technology of artificial assembly and self-assembly of single atoms and molecules. The characteristics and functions exhibited by a single quantum or quantum wave are used for the generation, transmission and exchange of information. Devices, circuits and systems and their applications in information science and technology, nanobiology, nanometry, nanomicroscopy, nanomechanics Applied discipline, also known as quantum functional electronics. ^[2]

Nanoelectronics is an important part of nanotechnology, the inevitable result of the development of traditional microelectronics, and the main driving force for the development of nanotechnology. On the basis of traditional solid-state electronics, nanoelectronics uses the latest physical theories and the most advanced technological methods to construct electronic devices and systems according to new concepts. The ability of nanoelectronics to develop the underlying information and structure of matter at a deeper level has increased the function of storing and processing information per unit volume of matter by more than a million times, achieving a revolutionary breakthrough in information collection and processing capabilities. The combination of nanoelectronics and optoelectronics, biology, mechanics and other disciplines can be made into nanoelectronics / optoelectronic devices, molecular devices, nanoelectromechanical systems, nanophotoelectromechanical systems, micro-robots, etc., which will affect human production and lifestyle With a transformative impact, nanoelectronics / optoelectronics will become a key science and technology in the 21st century information age. ^[1]

According to Moore's Law, in the next 10 years, it will face severe challenges to continue to improve the storage density and computing power of computers. These challenges have both physical and technical limitations in principle ^[3] . Its main performance is: when the size of the electronic device is on the order of micrometers, the electrons therein are mainly particulate. But when the size of the device is as small as nanometers, the electrons are mainly volatile. The fluctuation of electrons is a quantum effect. At this time, the electronic device will work under a new principle; any multi-body system has statistical fluctuations in heat. When the size of the device is reduced to the nanometer level, the thermal fluctuations will It will limit the consistency of the device performance, so that the integrated chip cannot work normally.

However, the emergence of nanoelectronic technology, nanoelectronic devices and nanoelectronics has provided new ways and opportunities for the development of microelectronic technology. This can be attributed to the continuous development of microelectronic technology and nanotechnology; on the other hand, it is attributed to the powerful power provided by microelectronics and quantum physics for the preparation, characteristics, mechanism and characterization of nanoelectronic devices for more than half a century. stand by. ^[4]

2 Nanoelectronic Device 2 Overview

Nanoelectronic devices refer to electronic devices with nanometer scale and specific functions designed and prepared by using nanoscale processing and manufacturing technologies, such as photolithography, epitaxy, microfabrication, self-assembly growth, and molecular synthesis technologies, etc. [! "#] At present, people have developed many nanoelectronic devices using nanoelectronic materials and nanolithography technology, such as electronic resonant tunneling devices, resonant diodes, tripolar resonant tunneling transistors, single-electron transistors, metal-based, semiconductors, nanoparticles, Single-electron electrometer, single-electronic memory, single-electron logic circuit, metal-based single-electron transistor memory, semiconductor memory, memory made of silicon nanocrystals, nano-floating gate memory, nano-silicon microcrystalline thin-film devices, and polymer electronic devices.

Nanoelectronic technology refers to the related technology of constructing nano and quantum devices in the nanometer size range and integrating nanocircuits to realize the information calculation, transmission and processing of quantum computers and quantum communication systems. Among them, nanoelectronic devices are the current development of nanoelectronic technology. Key and core. Nowadays, nanoelectronics technology is in a period of vigorous development. Its ultimate goal is to base on the latest physical theories and the most advanced technological methods, break through the traditional physical size and technological limits, develop the potential information and structural potential of matter, and follow the new concept. Design and manufacture nano-devices, construct electronic systems, and make the electronic system's ability to store and process information achieve a revolutionary leap.

3 Nanoelectronic devices 3 nanoelectronic device classification

Based on current developments and predictions for the future, if the main nanoelectronic devices are further classified, nano-CMOS devices mainly include: silicon MOSFETs on the insulation layer, silicon-germanium hetero-MOSFETs, low-temperature MOSFETs, bipolar MOSFE T, intrinsic silicon trenches Tunnel-type MOSFET, etc .; quantum effect devices include: quantum interference devices, quantum dot devices, and resonant tunnel devices, and resonant tunnel devices include: lateral resonant tunneling devices, resonant tunnel transistors, resonant tunnel field effect transistors (RTEET), dual Extremely quantum resonant tunneling transistor, resonant tunneling thermoelectronic transistor, vertical resonant tunneling device, and tunnel barrier modulation transistor, etc .; single-electronic devices mainly include: single-electron box, capacitive and resistive single-electron transistors, single-electron neural network transistors , Single-electron junction arrays, single-electron pumps, single-electron traps, and single-electron revolving doors; single-atom devices and single-molecule devices include: single-electron switches, single-atom point-contact devices, single-molecule switches, molecular wires, quantum-effect molecules Electronic devices, electrochemical molecular electronic devices, etc. ^[1]

Nano sensors will include:

Quantum tunnel sensors and nano biosensors; nano integrated circuits include nanoelectronic integrated circuits and nano optoelectronic integrated circuits. Nanomemory includes: ultra-high-capacity nanomemory, ultra-high-density data memory, tunnel-type static random access memory, and single-electron silicon-based MOS memory. , Single-electron memory, single-electron quantum memory; nano-CMOS hybrid circuits include: nano-CMOS circuits and 1-V group compound semiconductor resonance tunnel effect circuits, nano-CMOS circuits and single-electron nano-switch circuits, nano-CMOS circuits and superconducting single-flux quantum Circuit, nano CMOS circuit and carbon nanotube circuit, nano CMOS circuit and artificial atom circuit and artificial molecular circuit, nano CMOS circuit and DNA circuit, nano CMOS circuit and nano metal-based spin circuit and other mainstream circuits, for nanoelectronics Created a whole new development. Nano 1`v group compound semiconductor devices and circuits refer to resonant tunnel diodes and resonant tunnel transistors and circuits.It has strong potential in the fields of high speed, high frequency and optoelectronics. Scientists predict that in the 21st century nanoelectronic devices, nano optoelectronic devices, nano Integrated circuits and nano optoelectronic integrated circuits are the most promising. ^[1]

Nano single electronic device

Many nanoelectronic devices have been developed using nanoelectronics using nanoelectronic materials and nanolithography, such as: electronic resonant tunneling devices, electronic resonant tunneling devices, resonant diodes (RTDs), three-terminal resonant tunneling transistors (RTTs) ), Single electron transistor (SET), single island single electron transistor (SET), metal-based SET, semiconductor SET, nanoparticle SET, multi-island SET, single electron electrometer, single electron memory (SEM), single electron logic circuit, Single-electron c M os circuit, metal-based single-electron transistor (s ET) memory, semiconductor SET memory, silicon nanocrystal memory, nano-floating gate memory, single-electronic digital integrated circuit, single-electron transistor (s ET) logic integrated circuit , Nano-silicon microcrystalline thin-film devices (such as resonant tunneling diodes (RTDs)) and polymer electronic devices.

Electron wave device

Electron wave interference device, short-wavelength waveguide interference device, MachZender interferometer (electrostatic interference device), directional coupling device, diffractive device, quantum wire channel field effect transistor (FET), planar superlattice FET, electronic speed modulation FET resonance tunnel Wear devices and so on.

The electrons in devices such as quantum wave devices are in a phase coherent structure and their behavior is dominated by volatility. Such devices include quantum wire transistors, quantum interference devices, resonant tunneling diode transistors, and so on.

4 Nanoelectronic device 4 nanoelectronic device preparation technology

There are two possible ways to prepare nanoelectronic devices and implement their integrated circuits. One is to further extend the existing electronic devices and integrated circuits to miniaturization, research and develop smaller line width processing technology to process smaller electronic devices, the so-called "top to bottom" method. The other way is to use advanced nanotechnology and the quantum effects of nanostructures to directly form brand new quantum devices and quantum structure systems, a so-called "bottom-to-top" approach.

The "top-to-bottom" preparation method of nanoelectronic devices mainly refers to optical lithography, electron beam lithography, and ion beam lithography.

The "bottom-to-top" preparation method includes metal organic chemical vapor deposition, molecular beam epitaxy, atomic layer epitaxy, chemical beam epitaxy and other epitaxy technologies, scanning probe microscope technology, molecular self-assembly synthesis technology, and special ultra-fine processing technology Wait. ^[4]

Lithography

Optical lithography, electron beam lithography, and ion beam lithography are collectively referred to as three-beam lithography.

The processing technology of the device pattern structure transferred to the semiconductor substrate. At present, with the continuous reduction of the line width of lithography technology, optical lithography, electron beam lithography and ion beam lithography have shown good applications in processing fields such as nano devices, nano integrated circuits, and nano hybrid circuits. Prospects, and began to make applications in the processing of some nanoelectronic devices.

Optical lithography

Optical lithography is a technique of "engraving" a large-scale integrated circuit device structure pattern on a mask onto a photoresist-coated silicon wafer by a projection method through an optical system. It is now the mainstream technology for industrial semiconductor processing. In this technique, a methacrylate polymer is generally used as a resist coating, and a methyl isobutyl ketone and isopropanol mixture is used as a developer.

At present, the most interesting hot spot in the international microelectronics field is the new generation of lithography technology. Limiting the minimum line width that can be obtained by lithography is directly related to the resolution of the lithography system, and reducing the wavelength of the light source is the most effective way to improve the resolution of the lithography. At present, the light source wavelength of commercial lithography machines has entered the ultraviolet band from the mercury lamp source to the deep ultraviolet band. In addition, in-depth analysis of exposure imaging using the interference characteristics of light and electromagnetic theory combined with the actual lithography Using various wavefront technologies to optimize process parameters is also an important means to improve lithographic resolution. ^[4]

Electron beam lithography

Electron beam lithography is a photolithography technique that uses a high-energy electron beam to expose a photoresist to obtain a structure pattern.

Recently, the angle-limited scattering projection electron beam lithography technology developed by Lucent Corporation of the United States has attracted attention. This technology reduces the projection of the mask pattern like optical lithography and uses special filtering technology to remove the scattered electrons generated by the mask absorber. Thus, the output efficiency can be improved while ensuring the resolution. It should be pointed out that no matter what technology the future lithography uses, it will be an indispensable infrastructure for integrated circuit research and production. ^[4]

Ion beam lithography

Ion beam lithography is a photolithography technique that uses ions formed after ionization of liquid or gaseous atoms to accelerate the electromagnetic field and focus or collimate the electromagnetic lens to expose the photoresist. Its principle is similar to electron beam lithography, but De Broglie has a shorter wavelength, and has the advantages of no proximity effect, small exposure field, and other advantages. Ion beam lithography mainly includes focused ion beam lithography, ion projection lithography, and the like. Epitaxy

Metal organic chemical vapor deposition, molecular beam epitaxy, atomic layer epitaxy, and chemical beam epitaxy are collectively referred to as epitaxy. It is a nano-manufacturing technology for growing nano-films on substrates. It can be used for silicon-based semiconductor materials for nano integrated circuits Semiconductor structure: device processing and fabrication.

The beam intensity ratio is sprayed onto the heated substrate surface, and eventually interacts with the surface to perform epitaxial growth of the single crystal thin film. The baffle in front of each spray furnace is used to change the composition and doping of the epitaxial film. According to the set program, the baffle is opened and closed, the furnace temperature is changed, and the growth time is controlled. Then, ternary and quaternary solid solutions of different thickness compounds or different component ratios and their heterojunctions can be grown, thereby preparing various ultra-thin Microstructured materials. ^[4]

5 Nanoelectronics 5 Suggestions for future development of nanoelectronics

Attention must be paid to and vigorously carry out research work on nano-devices, especially nano-electronic devices and nano-optoelectronic devices. Academician Bai Chunli once pointed out that "the level of development and application of nano-devices is an important indicator of whether we have entered the nano-age", and pointed out that "China must attach great importance to the research and development of nano-device development and nano-scale detection and characterization." According to the current status of the development of nanotechnology in China, we must vigorously advocate the research, development and application of nanodevices, especially nanoelectronic devices and nanophotoelectronic devices. Because the research of nanoelectronic devices and nano optoelectronic devices is the fulcrum of nanotechnology and information (electronic information and optoelectronic information) technology, it plays a vital role in the economy and the entire science and technology. ^[1]

In the research and development of nanoelectronic devices and nano-optoelectronic devices, in addition to strengthening research on nanoelectronic devices such as RTD and SED, and nano-optical devices such as nano-lasers, nano-infrared photodetectors, nano-optoelectronic integrated circuits, etc., it is necessary to make great efforts in a timely manner. Carry out research work on molecular electronic devices. Internationally, the United States and Japan attach great importance to the study of molecular electronics. The world's top ten scientific and technological progress has reported the development of molecular transistors in the United States. That is, Bell Labs has produced the smallest transistor in the world with a single organic molecule. This is the molecular electronic device. Compared with the EB, MSE and other technologies for manufacturing RTD and SED, this type of electronic devices manufactured by chemical organic synthesis can greatly reduce costs and is suitable for large-scale production. We should call on chemists, electronics scientists, and optoelectronicians to work closely together to conduct research on molecular electronic devices. ^[1]

Effectively organize relevant domestic nanotechnology research departments, especially nanodevice research units, focus on technical forces, aim at key technologies and key issues in nanodevices, avoid duplication of research content, and obtain the results of source innovation as soon as possible. I hope that the Nanotechnology Steering and Coordinating Committee can fully and specifically understand the actual situation of domestic nanodevice research units, mobilize the enthusiasm of each unit for research, and focus on training nanotechnology talents. Whoever has top management and nanotechnology talents will master the future nanotechnology. Commanding heights. ^[1]