What Is Step-Up Basis?
DC boost is to raise the lower DC voltage provided by the battery to the required voltage value. The basic working process is: high frequency oscillation generates low voltage pulses-the pulse transformer boosts to a predetermined voltage value-pulse rectification High voltage direct current, so the DC boost circuit is a type of DC / DC circuit.
DC boost
- DC boost is to boost the lower DC voltage provided by the battery to the required voltage value. The basic working process is: high frequency oscillation produces low voltage pulses
- In battery-powered portable devices, the high voltage required in the circuit is obtained through a DC boost circuit. These devices include: wireless communication equipment such as mobile phones, pagers, flashlights in cameras, portable video display devices, electric mosquito Shock equipment and so on.
- There is also a need for high-power DC boost, such as photovoltaic power plants,
- Here are a few
- 9011,9012,9013,9014,9015,8050,8550 triode parameters and differences:
- 9011 NPN 30V 30mA 400mW 150MHz magnification 20-80
- 9012 PNP 50V 500mA 600mW low frequency tube magnification 30-90
- 9013 NPN 20V 625mA 500mW low frequency tube magnification 40-110
- 8050 NPN 25V 700mA 200mW 150MHz magnification 30-100
- 8550 PNP 40V 1500mA 1000mW 200MHz magnification 40-140
- Model Polar Power (W) Current (mA) BU (CEO) V fT (MHZ) hFE Main Application
- 9011 NPN 0.4 30 50 370 28 198 universal tube can be used for power amplification
- 9012 PNP 0.625 500 40-64 202 low noise amplifier tube
- 9013 NPN 0.625 500 40-64 202 low noise amplifier tube
- 9014 NPN 0.625 100 50 270 60 ~ 1000 Low noise amplifier tube
- 9015 PNP 0.45 100 50 190 60 600 low noise amplifier tube
- 9016 NPN 0.4 25 30 620 28 198 low noise amplifier tube
- 9018 NPN 0.4 50 30 1100 28 198 low noise high frequency amplifier tube
- Details are as follows:
- 90 series triode parameters
- Most of the 90 series triodes start with 90 characters, but there are also ST90, C or A90, S90, SS90, UTC90. Their characteristics and pin arrangement are the same.
- 9011 Structure: NPN
- Collector-emitter voltage 30V
- Collector-base voltage 50V
- Emitter-base voltage 5V
- Collector current 0.03A
- Dissipated power: 0.4W
- Junction temperature: 150
- Special frequency average 370MHZ
- Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
- 9012 Structure: PNP
- Collector-emitter voltage -30V
- Collector-base voltage -40V
- Emitter-base voltage-5V
- Collector current 0.5A
- Dissipated Power
- Junction temperature: 150
- Special frequency minimum 150MHZ
- Magnification: D64-91 E78-112 F96-135 G122-166 H144-220 I190-300
- 9013 Structure: NPN
- Collector-emitter voltage 25V
- Collector-base voltage 45V
- Emitter-base voltage 5V
- Collector current 0.5A
- Dissipated Power
- Junction temperature: 150
- Special frequency minimum 150MHZ
- Magnification: D64-91 E78-112 F96-135 G122-166 H144-220 I190-300
- 9014 Structure: NPN
- Collector-emitter voltage 45V
- Collector-base voltage 50V
- Emitter-base voltage 5V
- Collector current 0.1A
- Dissipated power: 0.4W
- Junction temperature: 150
- Special frequency minimum 150MHZ
- Magnification: A60-150 B100-300 C200-600 D400-1000
- 9015 Structure: PNP
- Collector-emitter voltage-45V
- Collector-base voltage -50V
- Emitter-base voltage-5V
- Collector current 0.1A
- Dissipated Power
- Junction temperature: 150
- Special frequency average 300MHZ
- Magnification: A60-150 B100-300 C200-600 D400-1000
- 9016 Structure: NPN
- Collector-emitter voltage 20V
- Collector-base voltage 30V
- Emitter-base voltage 5V
- Collector current 0.025A
- Dissipated power: 0.4W
- Junction temperature: 150
- Special frequency average 620MHZ
- Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
- 9018 Structure: NPN
- Collector-emitter voltage 15V
- Collector-base voltage 30V
- Emitter-base voltage 5V
- Collector current 0.05A
- Dissipated power: 0.4W
- Junction temperature: 150
- Special frequency average 620MHZ
- Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
- Transistor 8550
- 8550 is a common triode.
- It is a low voltage, high current, small signal PNP type silicon transistor
- Collector-base voltage Vcbo: -40V
- Working temperature: -55 to + 150
- Compared with 8050 (NPN)
- Main application: RF amplification for switching applications
- Transistor 8050
- Transistor 8050 (2 photos)
- 8050 is a commonly used NPN low power triode. The following is the parameter data of the 8050 pin diagram.
- 8050 three-stage tube parameters: type: switch type; polarity: NPN; material: silicon; maximum current of the collector (A): 0.5 A; DC gain: 10 to 60; power consumption: 625 mW Electricity (VCEO): 25; Frequency: 150 KHz
- PE8050 Silicon NPN 30V 1.5A 1.1W
- 3DG8050 Silicon NPN 25V 1.5A FT = 190 * K
- 2SC8050 Silicon NPN 25V 1.5A FT = 190 * K
- MC8050 Silicon NPN 25V 700mA 200mW 150MHz
- CS8050 Silicon NPN 25V 1.5A FT = 190 * K
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- These last three pipes are cheaper than other high pressure pipes.