What Is Step-Up Basis?

DC boost is to raise the lower DC voltage provided by the battery to the required voltage value. The basic working process is: high frequency oscillation generates low voltage pulses-the pulse transformer boosts to a predetermined voltage value-pulse rectification High voltage direct current, so the DC boost circuit is a type of DC / DC circuit.

DC boost

DC boost is to boost the lower DC voltage provided by the battery to the required voltage value. The basic working process is: high frequency oscillation produces low voltage pulses
In battery-powered portable devices, the high voltage required in the circuit is obtained through a DC boost circuit. These devices include: wireless communication equipment such as mobile phones, pagers, flashlights in cameras, portable video display devices, electric mosquito Shock equipment and so on.
There is also a need for high-power DC boost, such as photovoltaic power plants,
Here are a few
9011,9012,9013,9014,9015,8050,8550 triode parameters and differences:
9011 NPN 30V 30mA 400mW 150MHz magnification 20-80
9012 PNP 50V 500mA 600mW low frequency tube magnification 30-90
9013 NPN 20V 625mA 500mW low frequency tube magnification 40-110
8050 NPN 25V 700mA 200mW 150MHz magnification 30-100
8550 PNP 40V 1500mA 1000mW 200MHz magnification 40-140
Model Polar Power (W) Current (mA) BU (CEO) V fT (MHZ) hFE Main Application
9011 NPN 0.4 30 50 370 28 198 universal tube can be used for power amplification
9012 PNP 0.625 500 40-64 202 low noise amplifier tube
9013 NPN 0.625 500 40-64 202 low noise amplifier tube
9014 NPN 0.625 100 50 270 60 ~ 1000 Low noise amplifier tube
9015 PNP 0.45 100 50 190 60 600 low noise amplifier tube
9016 NPN 0.4 25 30 620 28 198 low noise amplifier tube
9018 NPN 0.4 50 30 1100 28 198 low noise high frequency amplifier tube
Details are as follows:
90 series triode parameters
Most of the 90 series triodes start with 90 characters, but there are also ST90, C or A90, S90, SS90, UTC90. Their characteristics and pin arrangement are the same.
9011 Structure: NPN
Collector-emitter voltage 30V
Collector-base voltage 50V
Emitter-base voltage 5V
Collector current 0.03A
Dissipated power: 0.4W
Junction temperature: 150
Special frequency average 370MHZ
Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
9012 Structure: PNP
Collector-emitter voltage -30V
Collector-base voltage -40V
Emitter-base voltage-5V
Collector current 0.5A
Dissipated Power
Junction temperature: 150
Special frequency minimum 150MHZ
Magnification: D64-91 E78-112 F96-135 G122-166 H144-220 I190-300
9013 Structure: NPN
Collector-emitter voltage 25V
Collector-base voltage 45V
Emitter-base voltage 5V
Collector current 0.5A
Dissipated Power
Junction temperature: 150
Special frequency minimum 150MHZ
Magnification: D64-91 E78-112 F96-135 G122-166 H144-220 I190-300
9014 Structure: NPN
Collector-emitter voltage 45V
Collector-base voltage 50V
Emitter-base voltage 5V
Collector current 0.1A
Dissipated power: 0.4W
Junction temperature: 150
Special frequency minimum 150MHZ
Magnification: A60-150 B100-300 C200-600 D400-1000
9015 Structure: PNP
Collector-emitter voltage-45V
Collector-base voltage -50V
Emitter-base voltage-5V
Collector current 0.1A
Dissipated Power
Junction temperature: 150
Special frequency average 300MHZ
Magnification: A60-150 B100-300 C200-600 D400-1000
9016 Structure: NPN
Collector-emitter voltage 20V
Collector-base voltage 30V
Emitter-base voltage 5V
Collector current 0.025A
Dissipated power: 0.4W
Junction temperature: 150
Special frequency average 620MHZ
Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
9018 Structure: NPN
Collector-emitter voltage 15V
Collector-base voltage 30V
Emitter-base voltage 5V
Collector current 0.05A
Dissipated power: 0.4W
Junction temperature: 150
Special frequency average 620MHZ
Magnification: D28-45 E39-60 F54-80 G72-108 H97-146 I132-198
Transistor 8550
8550 is a common triode.
It is a low voltage, high current, small signal PNP type silicon transistor
Collector-base voltage Vcbo: -40V
Working temperature: -55 to + 150
Compared with 8050 (NPN)
Main application: RF amplification for switching applications
Transistor 8050
Transistor 8050 (2 photos)
8050 is a commonly used NPN low power triode. The following is the parameter data of the 8050 pin diagram.
8050 three-stage tube parameters: type: switch type; polarity: NPN; material: silicon; maximum current of the collector (A): 0.5 A; DC gain: 10 to 60; power consumption: 625 mW Electricity (VCEO): 25; Frequency: 150 KHz
PE8050 Silicon NPN 30V 1.5A 1.1W
3DG8050 Silicon NPN 25V 1.5A FT = 190 * K
2SC8050 Silicon NPN 25V 1.5A FT = 190 * K
MC8050 Silicon NPN 25V 700mA 200mW 150MHz
CS8050 Silicon NPN 25V 1.5A FT = 190 * K
model
Types of
Technical Parameters
9013
NPN
25V 0.1A
8050
NPN
25V 1A
3055
NPN
100V 15A
5551
NPN
180V 0.6A
1507
NPN
300V 0.2A
3039
NPN
500V 7A
1453
NPN
1500V 3A
2SD1884
NPN
1500V 5A
MJE13003
NPN
400V 1.5A
MJE13005
NPN
400V 4A
MJE13007
NPN
400V 8A
These last three pipes are cheaper than other high pressure pipes.

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